NP110N055PUJ
500
400
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1000
100
FORWARD TRANSFER CHARACTERISTICS
300
200
10
1
0.1
T A = ? 55 ° C
25 ° C
85 ° C
150 ° C
175 ° C
100
V GS = 10 V
0.01
V DS = 10 V
0
Pulsed
0.001
Pulsed
0
0.2
0.4
0.6
0.8
1
1.2
0
1
2
3
4
5
V DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
1000
V GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
2
100
T A = ? 55 ° C
25 ° C
85 ° C
1
V DS = V GS
10
150 ° C
175 ° C
V DS = 5 V
0
I D = 250 μ A
1
Pulsed
-100
-50
0
50
100
150
200
1
10
100
1000
T ch - Channel Temperature - ° C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
5
V GS = 10 V
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
5
I D = 55 A
4
3
2
1
0
Pulsed
4
3
2
1
0
Pulsed
1
10
100
1000
0
5
10
15
20
25
4
I D - Drain Current - A
Data Sheet D19731EJ1V0DS
V GS - Gate to Source Voltage - V
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相关代理商/技术参数
NP110N055PUK 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
NP110N055PUK-E1-AY 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 55V 110A TO-263
NP111-273K 制造商:YAMAICHI 功能描述: 制造商:Yamaichi Electronics 功能描述:
NP112 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) TOG 1) .406 OPNG, BR
NP112AL 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) TOG 1) .406 OPNG, AL
NP112BK 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) TOG 1) .406 OPNG, BK
NP112GY 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) TOG 1) .406 OPNG, GY
NP112I 制造商:Hubbell Wiring Device-Kellems 功能描述:WALLPLATE, 2-G, 1) TOG 1) .406 OPNG, IV